NXP USA Inc. MRF1518NT1 RF MOSFETs Transistors 520MHz 13dB 8W
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MRF1518NT1
NXP MRF1518NT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 10 Weeks | |
| Package / Case | PLD-1.5 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Voltage Rated | 40V | |
| Usage Level | Military grade | |
| Packaging | Tape & Reel (TR) | |
| Published | 2002 | |
| JESD-609 Code | e3 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| HTS Code | 8541.29.00.75 | |
| Current Rating (Amps) | 4A | |
| Terminal Position | QUAD | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 520MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MRF1518 | |
| JESD-30 Code | R-PQSO-N4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 150mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 13dB | |
| Drain Current-Max (Abs) (ID) | 4A | |
| DS Breakdown Voltage-Min | 40V | |
| Power - Output | 8W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 62.5W | |
| Voltage - Test | 12.5V | |
| RoHS Status | ROHS3 Compliant |
MRF1518NT1
Download datasheets and manufacturer documentation for MRF1518NT1
- PCN Packaging12NC 27/Nov/2016
- DatasheetsMRF1518N Series
- Environmental InformationNXP RoHS3 Cert
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