NXP USA Inc. BSS83,215 RF MOSFETs Transistors
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BSS83,215
NXP BSS83,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | TO-253-4, TO-253AA | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 125°C | |
| Voltage Rated | 10V | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.21.00.95 | |
| Current Rating (Amps) | 50mA | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SUBSTRATE | |
| Transistor Application | SWITCHING | |
| Transistor Type | N-Channel | |
| Drain Current-Max (Abs) (ID) | 0.05A | |
| Drain-source On Resistance-Max | 120Ohm | |
| DS Breakdown Voltage-Min | 10V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.23W | |
| RoHS Status | ROHS3 Compliant |
BSS83,215
Download datasheets and manufacturer documentation for BSS83,215
- PCN Obsolescence/ EOLMultiple Devices 29/Dec/2014 Multiple Devices 01/Oct/2014
- DatasheetsBSS83
- PCN PackagingLighter Reels 02/Jan/2014
- Environmental InformationNXP RoHS3 Cert
- PCN Design/SpecificationResin Hardener 02/Jul/2013
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