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A3G26D055NT4

NXP  A3G26D055NT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case 6-LDFN Exposed Pad
Supplier Device Package 6-PDFN (7x6.5)
Mfr NXP USA Inc.
Product Status Active
Voltage Rated 125 V
Vds - Drain-Source Breakdown Voltage 125 V
Vgs th - Gate-Source Threshold Voltage - 3.5 V
Transistor Polarity Dual N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 8 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Part # Aliases 935402445528
Manufacturer NXP
Brand NXP Semiconductors
RoHS Details
Id - Continuous Drain Current 3 mA
Rds On - Drain-Source Resistance -
Series -
Packaging Cut Tape
Type RF Power MOSFET
Subcategory MOSFETs
Current Rating (Amps) -
Technology GaN Si
Frequency 100MHz ~ 2.69GHz
Operating Frequency 100 MHz to 2690 MHz
Number of Channels 2 ChannelChannel
Output Power 8 W
Current - Test 40 mA
Product Type RF MOSFET Transistors
Transistor Type GaN
Gain 13.9dB
Power - Output 8W
Noise Figure -
Voltage - Test 48 V
Product Category RF MOSFET Transistors
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