NXP Semiconductors PXT2222 Single BJT Transistors 30 V 1 W 0.6 A 30
PXT2222
1964-365-PXT2222
RoHS Compliant
Collector-Emitter Voltage-Max: 30 V,Power Dissipation-Max (Abs): 1 W,Collector Current-Max (IC): 0.6 A,DC Current Gain-Min (hFE): 30
In Stock Min. : 1
Mult. : 1
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PXT2222 Tech Specifications
pSemi PXT2222 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Turn-off Time-Max (toff) | 285 ns | |
| Turn-on Time-Max (ton) | 35 ns | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PSSO-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 1 W | |
| Collector Current-Max (IC) | 0.6 A | |
| DC Current Gain-Min (hFE) | 30 | |
| Collector-Emitter Voltage-Max | 30 V | |
| VCEsat-Max | 1.6 V | |
| Collector-Base Capacitance-Max | 8 pF |
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