NXP Semiconductors PMEG060V100EPD Bridge Rectifiers RECTIFIER DIODE
PMEG060V100EPD
1964-350-PMEG060V100EPD
RoHS Compliant
Diode Type: RECTIFIER DIODE
In Stock Min. : 1
Mult. : 1
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PMEG060V100EPD Tech Specifications
pSemi PMEG060V100EPD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 3Terminals | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Power Dissipation (Max) | 1.66 W | |
| Forward Voltage-Max (VF) | 0.56 V | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Life Cycle Code | Transferred | |
| ECCN Code | EAR99 | |
| Applications | EFFICIENCY | |
| Additional Feature | FREE WHEELING DIODE | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-F3 | |
| Configuration | SINGLE | |
| Diode Type | RECTIFIER DIODE | |
| Case Connection | CATHODE | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 60 V | |
| Non-rep Pk Forward Current-Max | 210 A | |
| Reverse Current-Max | 700 μA | |
| Reverse Recovery Time-Max | 0.016 μs |
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