NXP Semiconductors PBSS5350T Single BJT Transistors 200 50 V 2 A 1.2 W
PBSS5350T
1964-365-PBSS5350T
RoHS Compliant
DC Current Gain-Min (hFE): 200,Collector-Emitter Voltage-Max: 50 V,Collector Current-Max (IC): 2 A,Power Dissipation-Max (Abs): 1.2 W
In Stock Min. : 1
Mult. : 1
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PBSS5350T Tech Specifications
pSemi PBSS5350T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT-23 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| JEDEC-95 Code | TO-236AB | |
| Power Dissipation-Max (Abs) | 1.2 W | |
| Collector Current-Max (IC) | 2 A | |
| DC Current Gain-Min (hFE) | 200 | |
| Collector-Emitter Voltage-Max | 50 V |
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