NXP Semiconductors BLF248,112 RF MOSFETs Transistors 225 MHz 10 dB
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BLF248,112
NXP BLF248,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Screw | |
| Surface Mount | YES | |
| Number of Pins | 5Pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Channel Mode | Enhancement | |
| ECCN (US) | EAR99 | |
| Maximum Drain Source Resistance (mOhm) | 150@10V | |
| Maximum Continuous Drain Current (A) | 25 | |
| Maximum VSWR | 50 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Drain Source Voltage (V) | 65 | |
| Number of Elements per Chip | 2Elements per Chips | |
| Package Height | 5.77(Max) | |
| Mounting | Screw | |
| Military | No | |
| Supplier Package | CDFM | |
| Maximum Operating Temperature (°C) | 150 | |
| Minimum Operating Temperature (°C) | -65 | |
| Typical Drain Efficiency (%) | 67 | |
| Minimum Frequency (MHz) | 10 | |
| Maximum Frequency (MHz) | 225 | |
| Typical Power Gain (dB) | 13 | |
| Output Power (W) | 300 | |
| Maximum Power Dissipation (mW) | 500000 | |
| Typical Output Capacitance @ Vds (pF) | 360@28V | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 46@28V | |
| Typical Input Capacitance @ Vds (pF) | 500@28V | |
| Package Width | 10.29(Max) | |
| Package Length | 34.17(Max) | |
| PCB changed | 5 | |
| Voltage, Rating | 65 V | |
| Number of Elements | 2 Elements | |
| RoHS | Compliant | |
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Manufacturer Package Code | SOT262A1 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Manufacturer Part Number | BLF248,112 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.75 | |
| Part Package Code | DFM | |
| Drain Current-Max (ID) | 25 A | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.29.00.75 | |
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 500 W | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Current Rating | 25 A | |
| Frequency | 225 MHz | |
| Pin Count | 5 | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | Dual Common Source | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500 W | |
| Case Connection | SOURCE | |
| Output Power | 300 W | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 65 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 25 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Gain | 10 dB | |
| Max Frequency | 225 MHz | |
| Max Output Power | 300 W | |
| Drain Current-Max (Abs) (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| Drain to Source Breakdown Voltage | 65 V | |
| Input Capacitance | 500 pF | |
| DS Breakdown Voltage-Min | 65 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 500 W | |
| Drain to Source Resistance | 150 mΩ | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Mode of Operation | Class AB | |
| Test Voltage | 28 V | |
| Min Breakdown Voltage | 65 V | |
| Power Dissipation Ambient-Max | 500 W | |
| Power Gain-Min (Gp) | 10 dB | |
| Width | 10.29 mm | |
| Height | 5.77 mm | |
| Length | 34.17 mm | |
| RoHS Status | Supplier Unconfirmed | |
| Lead Free | Lead Free |
BLF248,112
Download datasheets and manufacturer documentation for BLF248,112
:
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ