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PMGD780SN,115
Nexperia PMGD780SN,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | TrenchMOS™ | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.75 | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 410mW | |
| Power - Max | 410mW | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 920m Ω @ 300mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.05nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (ID) | 490mA | |
| Drain Current-Max (Abs) (ID) | 0.49A | |
| Drain-source On Resistance-Max | 0.92Ohm | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |
PMGD780SN,115
Download datasheets and manufacturer documentation for PMGD780SN,115
- PCN PackagingLogo 10/Dec/2016 Pack/Label Update 30/Nov/2016
- DatasheetsPMGD780SN
- PCN Design/SpecificationResin Hardener 02/Jul/2013
- RohsStatementNXP-Semiconductors-company-12.pdf
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