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PMDPB58UPE,115

Nexperia  PMDPB58UPE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 8 Weeks
Surface Mount YES
Package / Case 6-UDFN Exposed Pad
Mounting Type Surface Mount
Number of Pins 6Pins
Transistor Element Material SILICON
Turn Off Delay Time 41 ns
Number of Elements 2 Elements
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 515mW
Pin Count 6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 67m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 804pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage -20V
Pulsed Drain Current-Max (IDM) 14.4A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Radiation Hardening No

PMDPB58UPE,115

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