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PMCXB900UEZ
Nexperia PMCXB900UEZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-XFDFN Exposed Pad | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 600mA 500mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | TrenchFET® | |
| Published | 2015 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Max Power Dissipation | 265mW | |
| Terminal Position | DUAL | |
| Pin Count | 6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N and P-Channel Complementary | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 620m Ω @ 600mA, 4.5V | |
| Vgs(th) (Max) @ Id | 950mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 500mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
PMCXB900UEZ
Download datasheets and manufacturer documentation for PMCXB900UEZ
- PCN PackagingPack/Label Update 30/Nov/2016 Label Chg 12/Mar/2017
- DatasheetsPMCXB900UE
- PCN Design/SpecificationPin 1 Marking Update 04/Feb/2015
- RohsStatementNXP-Semiconductors-company-12.pdf
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