Nexperia PHN210 Specialized Transistors
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PHN210 Tech Specifications
Nexperia PHN210 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Gross Weight | 38.50 | |
| Transport Packaging size/quantity | 34*24*30.5/200 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SO-8 | |
| Date Of Intro | 2017-02-01 | |
| Drain Current-Max (ID) | 3.4 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e4 | |
| ECCN Code | EAR99 | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | MS-012AA | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
PHN210 Documents
Download datasheets and manufacturer documentation for PHN210
- Datasheets096c057685017b8e571e26d795b3e25f.pdf
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