NEC Electronics Group 2SJ602-Z Specialized Transistors
2SJ602-Z
1712-375-2SJ602-Z
RoHS Compliant
Power Field-Effect Transistor, 20A I(D), 60V, 0.107ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN
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2SJ602-Z Tech Specifications
NEC 2SJ602-Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | TO-220 | |
| Package Description | MP-25Z, TO-220SMD, 3 PIN | |
| Drain Current-Max (ID) | 20 A | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.107 Ω | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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