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NTR2101PT1G Tech Specifications
Murata NTR2101PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8541.21.00.95 | |
| Category | Small Signal | |
| Process Technology | TMOS | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 8 | |
| Maximum Gate Source Voltage (V) | ±8 | |
| Maximum Continuous Drain Current (A) | 3.7 | |
| Maximum Drain Source Resistance (MOhm) | 52@4.5V | |
| Typical Gate Charge @ Vgs (nC) | 12@4.5V | |
| Typical Input Capacitance @ Vds (pF) | 1173@4V | |
| Maximum Power Dissipation (mW) | 960 | |
| Typical Fall Time (ns) | 31 | |
| Typical Rise Time (ns) | 15.75 | |
| Typical Turn-Off Delay Time (ns) | 38 | |
| Typical Turn-On Delay Time (ns) | 7.4 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| Configuration | Single | |
| Channel Type | P |
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