Microchip Technology ARF1501 RF MOSFETs Transistors 750W 17 dB 27.12MHz
ARF1501
1610-368-ARF1501
T-1
Power - Output: 750W,Gain: 17 dB,Frequency: 27.12MHz
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ARF1501
Microchip ARF1501 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Package / Case | T-1 | |
| Surface Mount | YES | |
| Supplier Device Package | T-1 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Id - Continuous Drain Current | 30 A | |
| Vds - Drain-Source Breakdown Voltage | 1 kV | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Channel Mode | Enhancement | |
| Fall Time | 13 ns | |
| Forward Transconductance - Min | 5.5 mS | |
| Pd - Power Dissipation | 1.5 kW | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Vgs - Gate-Source Voltage | 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Unit Weight | 0.669777 oz | |
| Continuous Drain Current Id | 30 | |
| Package | Tube | |
| Base Product Number | ARF1501 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Voltage Rated | 1000 V | |
| Voltage, Rating | 1 kV | |
| Number of Elements | 1 Element | |
| Mounting Styles | Flange Mount | |
| Rds On - Drain-Source Resistance | - | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | ARF1501 | |
| Package Style | FLATPACK | |
| Package Description | CERAMIC PACKAGE-6 | |
| Package Shape | SQUARE | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 1.8 | |
| Drain Current-Max (ID) | 30 A | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Series | - | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | HIGH RELIABILITY | |
| Current Rating (Amps) | 30A | |
| Max Power Dissipation | 1.5 kW | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Current Rating | 30 A | |
| Frequency | 27.12MHz | |
| Pin Count | 6 | |
| JESD-30 Code | S-CDFP-F6 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 40 MHz | |
| Configuration | N-Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.5 | |
| Case Connection | ISOLATED | |
| Output Power | 750 W | |
| Transistor Application | AMPLIFIER | |
| Rise Time | 5 ns | |
| Drain to Source Voltage (Vdss) | 1 kV | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | - 55 C to + 175 C | |
| Continuous Drain Current (ID) | 30 A | |
| Gate to Source Voltage (Vgs) | 30 V | |
| Gain | 17 dB | |
| Drain Current-Max (Abs) (ID) | 30 A | |
| DS Breakdown Voltage-Min | 1000 V | |
| Channel Type | N Channel | |
| Power - Output | 750W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1500 W | |
| Noise Figure | - | |
| Voltage - Test | 250 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Test Voltage | 250 V | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
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