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APT80GP60B2G Tech Specifications
Microchip APT80GP60B2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | T-Max-3 | |
| Mounting Type | Through Hole | |
| Supplier Device Package | T-MAX™ [B2] | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 2.2 V | |
| Continuous Collector Current at 25 C | 100 A | |
| Gate-Emitter Leakage Current | 100 nA | |
| Pd - Power Dissipation | 1041 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Through Hole | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 100 A | |
| Base Product Number | APT80GP60 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Packaging | Tube | |
| Series | POWER MOS 7® | |
| Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 1041 W | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 80A | |
| IGBT Type | PT | |
| Product | IGBT Silicon Modules |
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