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APT80GA60B Tech Specifications

Microchip  APT80GA60B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247 [B]
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 143 A
Pd - Power Dissipation 625 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 143 A
Gate-Emitter Leakage Current 100 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 8
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 143 A
Base Product Number APT80GA60
Mfr Microchip Technology
Product Status Active
Test Conditions 400V, 47A, 4.7Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Configuration Single
Input Type Standard
Power - Max 625 W
Operating Temperature Range - 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 47A
Continuous Collector Current 143 A
IGBT Type PT
Gate Charge 230 nC
Current - Collector Pulsed (Icm) 240 A
Td (on/off) @ 25°C 23ns/158ns
Switching Energy 840µJ (on), 751µJ (off)
Height 21.46 mm
Length 16.26 mm
Width 5.31 mm
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