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APT25GT120BRDQ2G Tech Specifications

Microchip  APT25GT120BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Surface Mount NO
Supplier Device Package TO-247 [B]
Weight 38.000013 g
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 3.2 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 54 A
Pd - Power Dissipation 347 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 54 A
Gate-Emitter Leakage Current 120 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename Thunderbolt IGBT
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 54 A
Base Product Number APT25GT120
Mfr Microchip Technology
Product Status Active
Test Conditions 800V, 25A, 5Ohm, 15V
Collector-Emitter Breakdown Voltage 1.2 kV
Voltage Rating (DC) 1.2 kV
Package Description ROHS COMPLIANT, TO-247, 3 PIN
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Turn-on Time-Nom (ton) 41 ns
Turn-off Time-Nom (toff) 186 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT25GT120BRDQ2G
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.18
Part Package Code TO-247
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 347 W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 54 A
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration Single
Element Configuration Single
Power Dissipation 347
Case Connection COLLECTOR
Input Type Standard
Power - Max 347 W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2 kV
Max Collector Current 54 A
Operating Temperature Range - 55 C to + 150 C
JEDEC-95 Code TO-247
Voltage - Collector Emitter Breakdown (Max) 1200 V
Power Dissipation-Max (Abs) 347 W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 25A
Collector Current-Max (IC) 54 A
Continuous Collector Current 54 A
IGBT Type NPT
Collector-Emitter Voltage-Max 1200 V
Gate Charge 170 nC
Current - Collector Pulsed (Icm) 75 A
Td (on/off) @ 25°C 14ns/150ns
Switching Energy 930µJ (on), 720µJ (off)
Gate-Emitter Voltage-Max 30 V
Gate-Emitter Thr Voltage-Max 6.5 V
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
Radiation Hardening No
Lead Free Lead Free
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