Microchip Technology APT200GN60JDQ4 IGBTs Modules 600 V 682 W
APT200GN60JDQ4
1610-371-APT200GN60JDQ4
SOT-227-4
RoHS Compliant
Voltage - Collector Emitter Breakdown (Max): 600 V,Power - Max: 682 W,Operating Temperature: -55°C ~ 175°C (TJ)
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APT200GN60JDQ4 Tech Specifications
Microchip APT200GN60JDQ4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | SOT-227-4 | |
| Mounting Type | Chassis Mount | |
| Surface Mount | NO | |
| Supplier Device Package | ISOTOP® | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 1.5 V | |
| Continuous Collector Current at 25 C | 283 A | |
| Gate-Emitter Leakage Current | 600 nA | |
| Pd - Power Dissipation | 682 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Tradename | ISOTOP | |
| Unit Weight | 1.058219 oz | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 283 A | |
| Base Product Number | APT200 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Package Description | ISOTOP-4 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 130 ns | |
| Manufacturer Package Code | ISOTOP | |
| Turn-off Time-Nom (toff) | 660 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APT200GN60JDQ4 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 1.52 | |
| Part Package Code | ISOTOP | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | - | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | R-PUFM-X4 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Power Dissipation | 682 | |
| Case Connection | ISOLATED | |
| Power - Max | 682 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Operating Temperature Range | - 55 C to + 175 C | |
| Current - Collector Cutoff (Max) | 50 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Power Dissipation-Max (Abs) | 682 W | |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 200A | |
| Collector Current-Max (IC) | 283 A | |
| Continuous Collector Current | 283 | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 600 V | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 20 V | |
| Input Capacitance (Cies) @ Vce | 14.1 nF @ 25 V | |
| Product | IGBT Silicon Modules | |
| Height | 9.6 mm | |
| Length | 38.2 mm | |
| Width | 25.4 mm |
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