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IXTQ52N30P Tech Specifications

Littelfuse  IXTQ52N30P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.21.00.95
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 300
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 52
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 25
Maximum Drain Source Resistance (mOhm) 73@10V
Typical Gate Charge @ Vgs (nC) 110@10V
Typical Gate Charge @ 10V (nC) 110
Typical Input Capacitance @ Vds (pF) 3490@25V
Maximum Power Dissipation (mW) 400000
Typical Fall Time (ns) 20
Typical Rise Time (ns) 22
Typical Turn-Off Delay Time (ns) 60
Typical Turn-On Delay Time (ns) 24
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Width 4.9(Max)
Package Length 15.8(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-3P
Supplier Package TO-3P
Lead Shape Through Hole
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
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