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RF4E080BNTR Tech Specifications

LAPIS  RF4E080BNTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case 8-PowerUDFN
Supplier Device Package HUML2020L8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃ 8A (Ta)
Other Names RF4E080BNTRCT
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Series -
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17.6 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
FET Feature -
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