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R6024ENZ1C9 Tech Specifications

LAPIS  R6024ENZ1C9 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃ 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 120W (Tc)
Operating Temperature 150°C (TJ)
Series -
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 165 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
FET Feature -
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