LAPIS R5009FNJTL Single MOSFETs Transistors
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R5009FNJTL Tech Specifications
LAPIS R5009FNJTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | LPTS | |
| Voltage, Rating | 100 V | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 9A (Tc) | |
| Other Names | R5009FNJTLCT | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| Packaging | Cut Tape (CT) | |
| Tolerance | 0.5 % | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Temperature Coefficient | 25 ppm/°C | |
| Resistance | 109 kΩ | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Power Rating | 100 mW | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 840 mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | ±30V | |
| FET Feature | - | |
| Height | 650 µm |
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