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IXFT60N20F Tech Specifications

IXYS  IXFT60N20F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 60
Maximum Drain Source Resistance (mOhm) 38@10V
Typical Gate Charge @ Vgs (nC) 100@10V
Typical Gate Charge @ 10V (nC) 100
Typical Input Capacitance @ Vds (pF) 2930@25V
Maximum Power Dissipation (mW) 320000
Typical Fall Time (ns) 7
Typical Rise Time (ns) 14
Typical Turn-Off Delay Time (ns) 42
Typical Turn-On Delay Time (ns) 15
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 5.1(Max)
Package Width 14(Max)
Package Length 16.05(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-268-AA
Supplier Package TO-268
Lead Shape Gull-wing
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type N
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