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FII50-12E Tech Specifications

IXYS  FII50-12E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac™-5
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Published 2003
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 200W
Terminal Position SINGLE
Pin Count 5
JESD-30 Code R-PSIP-T5
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 50A
Current - Collector Cutoff (Max) 400μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2nF
Turn On Time 135 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2nF @ 25V
RoHS Status RoHS Compliant
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FII50-12E Documents

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