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IRFR5305TRPBF Tech Specifications
International Rectifier IRFR5305TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Material | Polyolefin | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Mfr | Cree LED | |
| Shrinkage diameter | 4.0 mm | |
| Shrinkage after diameter | 2.0 mm | |
| Shrinkage thickness | 0.45 mm | |
| Shrinkage temperature | +80...+120 °C | |
| Gross weight | 5.95 | |
| Transport packaging size/quantity | 105*20*16/1000 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | LEAD FREE, PLASTIC, DPAK-3 | |
| Drain Current-Max (ID) | 31 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Packaging | Tape & Reel (TR);Cut Tape (CT);Digi-Reel® | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | Non-flame-retardant heat-shrinkable tube | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Color | black | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Operating temperature range | -55...+125 °C | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 110 W | |
| Shrinkage ratio | 2:1 | |
| Saturation Current | 1 | |
| Operating voltage | 600 V | |
| Length | 1 m |
IRFR5305TRPBF Documents
Download datasheets and manufacturer documentation for IRFR5305TRPBF
- Datasheetse8a45f89e373ee6d02e0cc23e9b52209.pdf
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