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IRFR6215TRPBF Tech Specifications

Infineon  IRFR6215TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 110W Tc
Turn Off Delay Time 53 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 295mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Voltage - Rated DC -150V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -13A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 36ns
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) -13A
Threshold Voltage -4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 44A
Dual Supply Voltage -150V
Recovery Time 240 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Height 2.52mm
Length 6.7056mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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