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IRF3205STRLPBF Tech Specifications

Infineon  IRF3205STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 200W Tc
Turn Off Delay Time 50 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 110A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Rise Time 101ns
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 4V
JEDEC-95 Code TO-252
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 264 mJ
Recovery Time 104 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V
Height 5.084mm
Length 10.668mm
Width 10.54mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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