- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
- BSD840NH6327XTSA1
:
398400 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BSD840NH6327XTSA1
Infineon BSD840NH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 7.8 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Max Power Dissipation | 500mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BSD840 | |
| Pin Count | 6 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| Turn On Delay Time | 1.9 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 880mA, 2.5V | |
| Vgs(th) (Max) @ Id | 750mV @ 1.6μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V | |
| Rise Time | 2.2ns | |
| Continuous Drain Current (ID) | 880mA | |
| Threshold Voltage | 550mV | |
| Gate to Source Voltage (Vgs) | 8V | |
| Max Dual Supply Voltage | 20V | |
| Drain Current-Max (Abs) (ID) | 3.5A | |
| Drain-source On Resistance-Max | 0.4Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Height | 1mm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BSD840NH6327XTSA1
Download datasheets and manufacturer documentation for BSD840NH6327XTSA1
- DatasheetsBSD840N
- PCN Assembly/OriginPCN 2016-052-A Retraction 25/Apr/2017
- Other Related DocumentsPart Number Guide
- PCN PackagingReel Cover Tape Chg 16/Feb/2016
- Simulation ModelsOptiMOS? Power MOSFET 20V N-Channel Spice Model
- ConflictMineralStatementInfineon-company-51.pdf
:
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



