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- Diodes - RF
- BAT62E6327HTSA1
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BAT62E6327HTSA1
Infineon BAT62E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Package / Case | TO-253-4, TO-253AA | |
| Number of Pins | 4Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Power Dissipation (Max) | 100mW | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 40V | |
| Terminal Form | GULL WING | |
| Current Rating | 20mA | |
| Base Part Number | BAT62 | |
| Max Current Rating | 20mA | |
| Element Configuration | Dual | |
| Diode Type | Schottky - 2 Independent | |
| Forward Current | 20mA | |
| Halogen Free | Not Halogen Free | |
| Forward Voltage | 1V | |
| Peak Reverse Current | 10μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 40V | |
| Capacitance @ Vr, F | 0.6pF @ 0V 1MHz | |
| Diode Capacitance-Max | 0.6pF | |
| Type of Schottky Barrier | LOW BARRIER | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BAT62E6327HTSA1
Download datasheets and manufacturer documentation for BAT62E6327HTSA1
- Other Related DocumentsPart Number Guide
- PCN PackagingCarrier Tape Update 03/Jun/2015
- ConflictMineralStatementInfineon-company-51.pdf
- Datasheets
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