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HIN202IP Tech Specifications
HARRIS HIN202IP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Supplier Device Package | IPAK (TO-251) | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 44A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | International Rectifier | |
| Power Dissipation (Max) | 107W (Tc) | |
| Product Status | Active | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | HEXFET® | |
| Type | Transceiver | |
| Technology | MOSFET (Metal Oxide) | |
| Voltage - Supply | 4.5V ~ 5.5V | |
| Data Rate | 120kbps | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 26A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Vgs (Max) | ±20V | |
| Protocol | RS232 | |
| Number of Drivers/Receivers | 2/2Drivers/Receiver | |
| Duplex | Full | |
| Receiver Hysteresis | 500 mV | |
| FET Feature | - |
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