HIN202IP Tech Specifications

HARRIS  HIN202IP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package IPAK (TO-251)
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr International Rectifier
Power Dissipation (Max) 107W (Tc)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Series HEXFET®
Type Transceiver
Technology MOSFET (Metal Oxide)
Voltage - Supply 4.5V ~ 5.5V
Data Rate 120kbps
FET Type N-Channel
Rds On (Max) @ Id, Vgs 27mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Vgs (Max) ±20V
Protocol RS232
Number of Drivers/Receivers 2/2Drivers/Receiver
Duplex Full
Receiver Hysteresis 500 mV
FET Feature -
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