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G3S06506B Tech Specifications

Global Power  G3S06506B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Package Cut Tape (CT);Tape & Box (TB);
Mfr Global Power Technology-GPT
Product Status Active
Current - Average Rectified (Io) (per Diode) 14A (DC)
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
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