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MBR400150CTR Tech Specifications

GeneSiC Semiconductor  MBR400150CTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 4 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Applications POWER
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 150V
Voltage - Forward (Vf) (Max) @ If 880mV @ 200A
Operating Temperature - Junction -55°C~150°C
Max Reverse Voltage (DC) 150V
Average Rectified Current 200A
Number of Phases 1Phase
Non-rep Pk Forward Current-Max 3000A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 3000μA
RoHS Status RoHS Compliant
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MBR400150CTR Documents

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