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MBR300100CTR Tech Specifications

GeneSiC Semiconductor  MBR300100CTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time 6 Weeks
Package / Case Twin Tower
Mounting Type Chassis Mount
Mount Chassis Mount
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Applications POWER
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 8mA @ 20V
Voltage - Forward (Vf) (Max) @ If 840mV @ 150A
Forward Current 300A
Max Reverse Leakage Current 1μA
Max Surge Current 2.5kA
Output Current-Max 150A
Current - Average Rectified (Io) 300A DC
Max Reverse Voltage (DC) 100V
Average Rectified Current 300A
Number of Phases 1Phase
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
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