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MBR120200CT Tech Specifications

GeneSiC Semiconductor  MBR120200CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Applications POWER
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 200V
Voltage - Forward (Vf) (Max) @ If 920mV @ 60A
Operating Temperature - Junction -55°C~150°C
Max Reverse Voltage (DC) 200V
Average Rectified Current 60A
Number of Phases 1Phase
Non-rep Pk Forward Current-Max 800A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 1000μA
RoHS Status RoHS Compliant
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MBR120200CT Documents

Download datasheets and manufacturer documentation for   MBR120200CT

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