FUJITSU Semiconductor Limited FLL200IB-2 Specialized Transistors
FLL200IB-2
922-375-FLL200IB-2
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
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FLL200IB-2
Fujitsu FLL200IB-2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU SEMICONDUCTOR AMERICA INC | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Manufacturer Package Code | CASE IB | |
| Drain Current-Max (ID) | 6 A | |
| Number of Elements | 1 Element | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 15 V | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | L BAND |
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