Eupec Gmbh & Co Kg BSM35GD120D2 Single IGBTs
BSM35GD120D2
1213-372-BSM35GD120D2
RoHS Compliant
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,
In Stock Min. : 1
Mult. : 1
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BSM35GD120D2 Tech Specifications
Infineon Eupec BSM35GD120D2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 17Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | EUPEC GMBH & CO KG | |
| Number of Elements | 6 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-XUFM-X17 | |
| Qualification Status | Not Qualified | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 280 W | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 3.2 V |
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