E2V 8602501XA Memory ICs
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8602501XA Tech Specifications
E2V 8602501XA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Pins | 28Pins | |
| Number of Terminals | 28Terminals | |
| Schedule B | 8542320040, 8542320040/8542320040/8542320040/8542320040/8542320040 | |
| RoHS | Compliant | |
| Package Description | DIP, DIP28,.6 | |
| Package Style | IN-LINE | |
| Number of Words Code | 16Words Codes | |
| Package Body Material | CERAMIC, GLASS-SEALED | |
| Package Equivalence Code | DIP28,.6 | |
| Operating Temperature-Min | -55 °C | |
| Access Time-Max | 30 ns | |
| Operating Temperature-Max | 125 °C | |
| Manufacturer Part Number | 8602501XA | |
| Number of Words | 16 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | DIP | |
| Package Shape | RECTANGULAR | |
| Manufacturer | e2v technologies | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TELEDYNE E2V (UK) LTD | |
| Risk Rank | 5.55 | |
| Part Package Code | DIP | |
| Usage Level | Military grade | |
| ECCN Code | 3A001.A.2.C | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | SRAMs | |
| Technology | BIPOLAR | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Number of Functions | 1Function | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 28 | |
| JESD-30 Code | R-GDIP-T28 | |
| Qualification Status | Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Temperature Grade | MILITARY | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Operating Mode | ASYNCHRONOUS | |
| Organization | 16X4 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 4 | |
| Memory Density | 64 bit | |
| Screening Level | MIL-STD-883 | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | DUAL-PORT SRAM |
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