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SBR20A100CTE Tech Specifications
Diodes SBR20A100CTE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 5 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | |
| Weight | 2.084002g | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tube | |
| Series | SBR® | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Solder | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -65°C | |
| Applications | GENERAL PURPOSE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Element Configuration | Single | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Diode Type | Super Barrier | |
| Current - Reverse Leakage @ Vr | 100μA @ 100V | |
| Voltage - Forward (Vf) (Max) @ If | 750mV @ 10A | |
| Forward Current | 20A | |
| Operating Temperature - Junction | -65°C~175°C | |
| Forward Voltage | 750mV | |
| Max Reverse Voltage (DC) | 100V | |
| Average Rectified Current | 10A | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 100μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 100V | |
| Peak Non-Repetitive Surge Current | 250A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Reverse Voltage (DC) | 100V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
SBR20A100CTE Documents
Download datasheets and manufacturer documentation for SBR20A100CTE
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsSBR20A100CTE
- PCN Assembly/OriginMulti Device Wafer Source Add 12/Apr/2016
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