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CSD20060D Tech Specifications
Cree CSD20060D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Radial, Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| Packaging | Tube | |
| Series | Zero Recovery™ | |
| Published | 2009 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Capacitance | 550pF | |
| Voltage - Rated DC | 600V | |
| Current Rating | 20A | |
| Polarity | Standard | |
| Element Configuration | Common Cathode | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky | |
| Current - Reverse Leakage @ Vr | 200μA @ 600V | |
| Output Current | 20A | |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A | |
| Forward Current | 20A | |
| Operating Temperature - Junction | -55°C~175°C | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) | 16.5A | |
| Max Reverse Voltage (DC) | 600V | |
| Average Rectified Current | 16.5A | |
| Reverse Recovery Time | 0 s | |
| Peak Reverse Current | 200μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 600V | |
| Peak Non-Repetitive Surge Current | 500A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
CSD20060D Documents
Download datasheets and manufacturer documentation for CSD20060D
- DatasheetsCSD20060D
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