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C3D20060D Tech Specifications

Cree  C3D20060D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 6 Weeks
Mount Radial, Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Supplier Device Package TO-247-3
Packaging Tube
Series Z-Rec®
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 136.3W
Element Configuration Common Cathode
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.8V @ 10A
Forward Current 28A
Max Reverse Leakage Current 50μA
Operating Temperature - Junction -55°C~175°C
Max Surge Current 250A
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 10A
Forward Voltage 1.8V
Max Reverse Voltage (DC) 600V
Average Rectified Current 10A
Reverse Recovery Time 0 s
Peak Reverse Current 50μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 157A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 180A
Height 21.082mm
Length 16.03mm
Width 5.156mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status RoHS Compliant
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C3D20060D Documents

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