In Stock
:
41 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
C3D10065A Tech Specifications
Cree C3D10065A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 6 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Number of Pins | 2Pins | |
| Supplier Device Package | TO-220-2 | |
| Packaging | Tube | |
| Series | Z-Rec® | |
| Published | 2010 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 136.3W | |
| Element Configuration | Single | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky | |
| Current - Reverse Leakage @ Vr | 60μA @ 650V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A | |
| Forward Current | 10A | |
| Max Reverse Leakage Current | 60μA | |
| Operating Temperature - Junction | -55°C~175°C | |
| Max Surge Current | 250A | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Current - Average Rectified (Io) | 30A DC | |
| Forward Voltage | 1.8V | |
| Max Reverse Voltage (DC) | 650V | |
| Average Rectified Current | 10A | |
| Reverse Recovery Time | 0 s | |
| Max Repetitive Reverse Voltage (Vrrm) | 650V | |
| Capacitance @ Vr, F | 480pF @ 0V 1MHz | |
| Peak Non-Repetitive Surge Current | 250A | |
| Max Forward Surge Current (Ifsm) | 90A | |
| REACH SVHC | Unknown | |
| RoHS Status | RoHS Compliant |
C3D10065A Documents
Download datasheets and manufacturer documentation for C3D10065A
- PCN Assembly/OriginMult Devices 13/Aug/2018
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



