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C3D10060G Tech Specifications

Cree  C3D10060G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2Pins
Supplier Device Package TO-263-2
Packaging Tube
Series Z-Rec®
Published 2009
Part Status Active
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 136.3W
Element Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.8V @ 10A
Forward Current 14A
Max Reverse Leakage Current 50μA
Operating Temperature - Junction -55°C~175°C
Max Surge Current 250A
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 29A DC
Forward Voltage 1.8V
Max Reverse Voltage (DC) 600V
Average Rectified Current 10A
Reverse Recovery Time 0 s
Peak Reverse Current 50μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Capacitance @ Vr, F 480pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 250A
Max Forward Surge Current (Ifsm) 90A
Height 4.572mm
Length 11.05mm
Width 10.312mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status RoHS Compliant
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C3D10060G Documents

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