- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - RF
- PTFB201402FC-V2-R250
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PTFB201402FC-V2-R250
Cree PTFB201402FC-V2-R250 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | H-37248-4 | |
| Factory Pack QuantityFactory Pack Quantity | 250 | |
| Maximum Operating Temperature | + 225 C | |
| Mounting Styles | SMD/SMT | |
| Rds On - Drain-Source Resistance | 300 mOhms | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 65 V | |
| Vgs - Gate-Source Voltage | 10 V | |
| Packaging | Reel | |
| Type | RF Power MOSFET | |
| Operating Frequency | 2010 MHz to 2025 MHz | |
| Number of Channels | 1 ChannelChannel | |
| Output Power | 140 W | |
| Transistor Type | LDMOS FET | |
| Gain | 16 dB |
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