- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
- CTLDM303N-M832DS TR
:
45000 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
CTLDM303N-M832DS TR
Central CTLDM303N-M832DS TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 6 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TDFN Exposed Pad | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.6A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-N8 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Power - Max | 1.65W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 1.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drain Current-Max (Abs) (ID) | 3.6A | |
| Drain-source On Resistance-Max | 0.078Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard |
CTLDM303N-M832DS TR
Download datasheets and manufacturer documentation for CTLDM303N-M832DS TR
- DatasheetsCTLDM303N-M832DS
- Environmental InformationRoHS3 Cert
- PCN Obsolescence/ EOLMult Dev EOL 5/Apr/2018
:
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



