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CBAT54STR Tech Specifications

Central  CBAT54STR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Supplier Device Package SOT-23
Diode Element Material SILICON
Number of Terminals 3Terminals
Current - Average Rectified (Io) (per Diode) 200mA
Package Description R-PDSO-G3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -65 °C
Operating Temperature-Max 150 °C
Rohs Code No
Manufacturer Part Number CBAT54STR
Power Dissipation (Max) 0.35 W
Package Shape RECTANGULAR
Manufacturer Central Semiconductor Corp
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Forward Voltage-Max (VF) 0.24 V
Risk Rank 5.15
Series --
Packaging Tape & Reel (TR)
JESD-609 Code e0
Part Status Active
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Technology SCHOTTKY
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Speed Small Signal =
Diode Type Schottky
Current - Reverse Leakage @ Vr 2µA @ 25V
Voltage - Forward (Vf) (Max) @ If 800mV @ 100mA
Operating Temperature - Junction -65°C ~ 150°C
Output Current-Max 0.2 A
Voltage - DC Reverse (Vr) (Max) 30V
Rep Pk Reverse Voltage-Max 30 V
Non-rep Pk Forward Current-Max 0.6 A
Diode Configuration 1 Pair Series Connection
Reverse Recovery Time-Max 0.005 µs
Reverse Recovery Time (trr) 5ns
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