CEL NE66219-T1-A RF BJT Transistors 35mA 35mA 3.3V

: CEL

Mfr. : NE66219-T1-A

Twicea : 414-364-NE66219-T1-A

: SOT-523

: Continuous Collector Current: 35mA,Max Collector Current: 35mA,Collector Emitter Voltage (VCEO): 3.3V

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NE66219-T1-A brand manufacturers: CEL, Twicea stock, NE66219-T1-A reference price.CEL. NE66219-T1-A parameters, NE66219-T1-A Datasheet PDF and pin diagram description download.You can use the NE66219-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE66219-T1-A pin diagram and circuit diagram and usage method of function,NE66219-T1-A electronics tutorials.You can download from the Twicea.

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Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3Pins
Collector-Emitter Breakdown Voltage	3.3V
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	115mW
Frequency	21GHz
Element Configuration	Single
Power Dissipation	115mW
Output Power	115mW
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	3.3V
Max Collector Current	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA 2V
Gain	14dB
Collector Base Voltage (VCBO)	15V
Emitter Base Voltage (VEBO)	1.5V
Continuous Collector Current	35mA
Noise Figure (dB Typ @ f)	1.2dB @ 2GHz
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free