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AO4422L
Taiwan Semiconductor AO4422L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Turn-off Time-Max (toff) | 30 ns | |
| Turn-on Time-Max (ton) | 12 ns | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Drain Current-Max (ID) | 11 A | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 3 W | |
| Feedback Cap-Max (Crss) | 140 pF | |
| Power Dissipation Ambient-Max | 3 W |
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