SKI10297 Tech Specifications

Allegro  SKI10297 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

EU RoHS Compliant with Exemption
ECCN (US) EAR99
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2.5
Maximum Continuous Drain Current (A) 34
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 100
Maximum Drain Source Resistance (MOhm) 28.8@10V
Typical Gate Charge @ Vgs (nC) 16.9@4.5V|36.5@10V
Typical Gate Charge @ 10V (nC) 36.5
Typical Input Capacitance @ Vds (pF) 2540@25V
Maximum Power Dissipation (mW) 90000
Typical Fall Time (ns) 9.4
Typical Rise Time (ns) 4.4
Typical Turn-Off Delay Time (ns) 21.9
Typical Turn-On Delay Time (ns) 4.7
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Part Status Obsolete
Configuration Single Dual Drain
Channel Type N
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