Agilent Technologies Inc ATF-10736-STR Specialized Transistors
ATF-10736-STR
2897-375-ATF-10736-STR
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, CERAMIC, 36, MICRO-X-4
Min. : 1
Mult. : 1
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ATF-10736-STR
Agilent ATF-10736-STR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AGILENT TECHNOLOGIES INC | |
| Package Description | MICROWAVE, X-CXMW-F4 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | UNSPECIFIED | |
| Package Style | MICROWAVE | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Position | UNSPECIFIED | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | X-CXMW-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 5 V | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.43 W | |
| Highest Frequency Band | X BAND | |
| Power Gain-Min (Gp) | 12 dB |
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