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MRF313

Advanced  MRF313 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case 305A-01
Voltage, Rating 100 V
Emitter- Base Voltage VEBO 3 V
Pd - Power Dissipation 6.1 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 20
Unit Weight 0.572232 oz
Minimum Operating Temperature - 65 C
Mounting Styles SMD/SMT
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 30 V
Packaging Tray
Tolerance 0.25 %
Temperature Coefficient 50 ppm/°C
Type RF Bipolar Small Signal
Resistance 205 kΩ
Max Operating Temperature 155 °C
Min Operating Temperature -55 °C
Composition Thin Film
Subcategory Transistors
Power Rating 100 mW
Technology Si
Operating Frequency 400 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar
Continuous Collector Current 150 mA
Product Category RF Bipolar Transistors
Height 650 µm
MRF313 brand manufacturers: Advanced, Twicea stock, MRF313 reference price.Advanced. MRF313 parameters, MRF313 Datasheet PDF and pin diagram description download.You can use the MRF313 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MRF313 pin diagram and circuit diagram and usage method of function,MRF313 electronics tutorials.You can download from the Twicea.